The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Apr. 24, 2019
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/66 (2006.01); H01L 21/8232 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/8232 (2013.01); H01L 21/8234 (2013.01); H01L 21/823462 (2013.01); H01L 29/207 (2013.01); H01L 29/66431 (2013.01); H01L 29/66439 (2013.01); H01L 29/66462 (2013.01); H01L 29/66469 (2013.01); H01L 29/66477 (2013.01); H01L 29/778 (2013.01); H01L 2924/13064 (2013.01);
Abstract
A high-electron-mobility field-effect transistor includes a superposition of first and second layers of semiconductor materials so as to form an electron gas layer and includes a gate stack arranged on the superposition. The gate stack includes a conductive electrode and an element made of p-doped semiconductor material, arranged between the conductive electrode and the superposition. The gate stack includes a first dielectric layer arranged between the conductive electrode and the element made of semiconductor material. The element made of semiconductor material, the first dielectric layer, and the conductive electrode have aligned lateral flanks.