The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jul. 02, 2019
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Abstract
A normally-off heterojunction field-effect transistor is provided, including a superposition of a first layer, of III-N type, and of a second layer, of III-N type, so as to form a two-dimensional electron gas; a stack of an n-doped third layer making electrical contact with the second layer, and of a p-doped fourth layer placed in contact with and on the third layer, a first conductive electrode and a second conductive electrode making electrical contact with the two-dimensional electron gas; a dielectric layer disposed against a lateral face of the fourth layer; and a control electrode separated from the lateral face of the fourth layer by the dielectric layer.