The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jul. 20, 2021
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Julien Buckley, Grenoble, FR;
Abstract
A semiconductor diode, including: a first doped semiconductor region of a first conductivity type; a second doped semiconductor region of a second conductivity type opposite to the first conductivity type, arranged on top of and in contact with the upper surface of the first semiconductor region; a first conductive region arranged on top of and in contact with the upper surface of the second semiconductor region, the first conductive region comprising a through opening opposite a portion of the second semiconductor region; a second conductive region made of a material different from that of the first conductive region, coating the upper surface of the second semiconductor region opposite said opening; a cavity extending through the second conductive region and through the second semiconductor region opposite a portion of said opening; a dielectric region coating the lateral walls and the bottom of the cavity; a third conductive region coating the dielectric region on the lateral walls and at the bottom of the cavity, the third conductive region being further electrically in contact with the first and second conductive regions.