Jongseob Kim

This inventor holds 26 USPTO granted patents and 47 published patent applications, primarily in High Electron Mobility Transistors. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010-2025.

USPTO Granted Patents = 26 (Patent Applications = 47)

% Patents Active = 92.3

Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 14(Granted Patents)

Location History:

Suwon-si, KR (2010 - 2012)
Seoul, KR (2021 - 2024)

Company Filing History:

26 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2010-2025

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Areas of Expertise:

High Electron Mobility Transistor

Power Device

Semiconductor Package

Field Effect Transistor

Nitride Semiconductor

Semiconductor IC Device

Thin Film Structures

Memory Devices

Driving Devices

Manufacturing Methods

Dopant Inactivation

Power Switching System

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12507430 - Power device and method of manufacturing the same (2025-12-23),

2. 12489038 - Semiconductor device package (2025-12-02),

3. 12464793 - Nitride semiconductor buffer structure and semiconductor device including the same (2025-11-04),

4. 12426294 - High electron mobility transistor (2025-09-23),

5. 12317536 - Semiconductor device and power switching system including the same (2025-05-27),

6. 12288738 - Semiconductor device package and method of fabricating the same (2025-04-29),

7. 12278281 - High electron mobility transistor (2025-04-14),

8. 12218233 - High electron mobility transistor and method of manufacturing the same (2025-02-04),

9. 12218206 - Power semiconductor device and method of manufacturing the same (2025-02-04),

10. 12199174 - High electron mobility transistor and method of manufacturing the same (2025-01-14),

11. 12119397 - Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same (2024-10-15),

12. 12113110 - Nitride semiconductor device with field effect gate (2024-10-08),

13. 12040391 - Power device and method of manufacturing the same (2024-07-16),

14. 12002879 - High electron mobility transistor and method of manufacturing the same (2024-06-04),

15. 11888059 - Field effect transistor including gradually varying composition channel (2024-01-30),

Title: Jongseob Kim: Pioneering Inventor from Seoul

Introduction: Jongseob Kim is a distinguished inventor hailing from Seoul, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jongseob Kim holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Jongseob Kim has worked with leading tech companies in South Korea, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Jongseob Kim has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing.

Conclusion: Jongseob Kim's passion for innovation, coupled with his relentless drive to push the boundaries of technology, solidifies his position as a trailblazing inventor in the global landscape of inventions and patents.