The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Mar. 03, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sunkyu Hwang, Seoul, KR;
Jongseob Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing a power semiconductor device includes forming a channel separation pattern on a substrate; forming a passivation layer on the substrate and the channel separation pattern; forming a gate hole, a source hole, and a drain hole penetrating the passivation layer in a same process step; and simultaneously forming a gate electrode pattern, a source electrode pattern, and a drain electrode pattern. The gate electrode pattern may be formed on the channel separation pattern. A side surface of the gate electrode pattern and a side surface of the channel separation pattern may have a step difference.