The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Sep. 02, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sunkyu Hwang, Seoul, KR;

Jongseob Kim, Seoul, KR;

Joonyong Kim, Seoul, KR;

Younghwan Park, Seongnam-si, KR;

Junhyuk Park, Pohang-si, KR;

Jaejoon Oh, Seongnam-si, KR;

Injun Hwang, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/66431 (2013.01);
Abstract

A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.


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