The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Apr. 25, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Boram Kim, Suwon-si, KR;
Jongseob Kim, Suwon-si, KR;
Woochul Jeon, Suwon-si, KR;
Joonyong Kim, Suwon-si, KR;
Junhyuk Park, Suwon-si, KR;
Jaejoon Oh, Suwon-si, KR;
Sunkyu Hwang, Suwon-si, KR;
Injun Hwang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.