The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Apr. 11, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Joonyong Kim, Suwon-si, KR;
Sunkyu Hwang, Suwon-si, KR;
Boram Kim, Suwon-si, KR;
Jongseob Kim, Suwon-si, KR;
Junhyuk Park, Suwon-si, KR;
Jaejoon Oh, Suwon-si, KR;
Injun Hwang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided are a power device and a manufacturing method thereof. A power device includes a compound semiconductor layer epitaxially grown on a substrate, a gate formed on the compound semiconductor layer, a source and a drain provided on either side of the gate, a passivation layer provided to cover the source, drain, and gate, and a cooling space region provided to form a cooling path inside the substrate. The cooling space region may be formed to a predetermined depth from the surface of the substrate and include an enlargement region having a width increasing according to a depth from the surface of the substrate. The width of an inlet of the cooling space region is less than a maximum width of the enlargement region, and the passivation layer and the compound semiconductor layer are provided to open the cooling space region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile