Kanagawa, Japan

Jongil Hwang

This inventor holds 31 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: Kabushiki Kaisha Toshiba, Johns Hopkins University, Toshiba Electronic Devices & Storage Corporation. Active years: 2011-2022.

USPTO Granted Patents = 31 

% Patents Active = 74.2

 

Average Co-Inventor Count = 5.1

ph-index = 4

Forward Citations = 187(Granted Patents)


Location History:

  • Kawasaki, JP (2011 - 2012)
  • Tokyo, JP (2013)
  • Ishikawa-ken, JP (2015)
  • Kanagawa-ken, JP (2013 - 2016)
  • Nonoichi, JP (2015 - 2018)
  • Kanagawa, JP (2013 - 2021)
  • Yokohama, JP (2022)

Company Filing History:


Years Active: 2011-2022

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Areas of Expertise:
Semiconductor Devices
Light Emitting Elements
Nitride Semiconductor
Crystal Growth
Manufacturing Methods
Inspection Apparatus
Light Emitting Devices
Electric-Power Generation
Doped Nitride Semiconductors
Wafer Technology
Lattice Polarities
Laser Devices
31 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Jongil Hwang in Semiconductor Technology

Introduction

Jongil Hwang, based in Kanagawa-ken, Japan, is a noteworthy inventor with an impressive portfolio comprising 31 patents. His work, primarily focused on semiconductor technology, has significantly advanced methodologies and apparatus used within the field.

Latest Patents

Hwang’s recent innovations include a comprehensive inspection apparatus for semiconductor devices and a novel method for crystal growth in semiconductor applications. The inspection apparatus features a first probe that contacts a specific portion of the semiconductor device while utilizing a conductive member positioned to oppose another part of the device. This apparatus is equipped with a detector that applies varying voltages to measure current flow, employing a first voltage and a conductive member voltage of opposing polarities to optimize the inspection process.

Additionally, his crystal growth method involves creating a first member at the bottom of a hole within a structure, which is crucial for controlling crystal growth. By supplying a source material containing a second element post formation of the first member, this approach allows for the effective growth of a crystal member within the established structure.

Career Highlights

Jongil Hwang has garnered extensive experience throughout his career, notably at reputable companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His contributions to these organizations have been instrumental in pushing the boundaries of semiconductor technology.

Collaborations

Throughout his tenure, Hwang has collaborated with distinguished professionals in the field, including Shinya Nunoue and Shinji Saito. These partnerships have fostered an environment of innovation, allowing for the exchange of ideas and advancements in semiconductor research and development.

Conclusion

Jongil Hwang’s contributions to the semiconductor industry through his patents and collaborative efforts demonstrate his commitment to innovation and excellence. As he continues to advance technology, his legacy in the field of semiconductors is bound to have a lasting impact.

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