The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Feb. 27, 2012
Hisashi Yoshida, Kanagawa-ken, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Toshiki Hikosaka, Kanagawa-ken, JP;
Jongil Hwang, Kanagawa-ken, JP;
Hung Hung, Kanagawa-ken, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Hisashi Yoshida, Kanagawa-ken, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Toshiki Hikosaka, Kanagawa-ken, JP;
Jongil Hwang, Kanagawa-ken, JP;
Hung Hung, Kanagawa-ken, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×10/cmor less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.