The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 18, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Jongil Hwang, Nonoichi, JP;
Rei Hashimoto, Edogawa-ku, JP;
Shinji Saito, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01S 5/00 (2006.01); H01L 33/32 (2010.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/18 (2013.01); H01S 5/00 (2013.01); H01L 33/32 (2013.01); H01S 5/3202 (2013.01); H01S 5/34333 (2013.01);
Abstract
According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and a second portion include a nitride semiconductor. The first portion has a first lattice polarity. The second portion has a second lattice polarity different from the first lattice polarity.