The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2015

Filed:

Feb. 23, 2011
Applicants:

Jongil Hwang, Kanagawa-ken, JP;

Shinji Saito, Kanagawa-ken, JP;

Maki Sugai, Tokyo, JP;

Rei Hashimoto, Tokyo, JP;

Yasushi Hattori, Kanagawa-ken, JP;

Masaki Tohyama, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Inventors:

Jongil Hwang, Kanagawa-ken, JP;

Shinji Saito, Kanagawa-ken, JP;

Maki Sugai, Tokyo, JP;

Rei Hashimoto, Tokyo, JP;

Yasushi Hattori, Kanagawa-ken, JP;

Masaki Tohyama, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/26 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/32 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of AlGaInN. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.


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