The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Feb. 28, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Hung Hung, Kanagawa-ken, JP;
Yoshiyuki Harada, Tokyo, JP;
Jongil Hwang, Kanagawa-ken, JP;
Mitsuhiro Kushibe, Tokyo, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, a first intermediate layer, and a second intermediate layer. The n-type and p-type semiconductor layers include a nitride semiconductor. The light emitting layer is provided between the n-type and p-type semiconductor layers, and includes barrier layers and a well layer. A bandgap energy of the well layer is less than that of the barrier layers. The first intermediate layer is provided between the light emitting layer and the p-type semiconductor layer. A bandgap energy of the first intermediate layer is greater than that of the barrier layers. The second intermediate layer includes first and second portions. The first portion is in contact with a p-side barrier layer most proximal to the p-type semiconductor layer. The second portion is in contact with the first intermediate layer.