The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Jun. 28, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
The Johns Hopkins University, Baltimore, MD (US);
Hiro Gangi, Tokyo, JP;
Jongil Hwang, Kanagawa, JP;
Thomas Kempa, Baltimore, MD (US);
Eric Thompson, Baltimore, MD (US);
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
The Johns Hopkins University, Baltimore, MD (US);
Abstract
According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.