San Lorenzo, CA, United States of America

Jonathan Pabustan

This inventor holds 22 USPTO granted patents and 1 EPO patent, primarily in Memory Device Technology. Top assignees: Micron Technology Incorporated, Silicon Storage Technology, Inc.. Active years: 2007-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonathan Pabustan. Retrieved from https://idiyas.com/inventor/jonathan-pabustan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 112(Granted Patents)


Company Filing History:


Years Active: 2007-2016

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Areas of Expertise:
Memory Device
Programming Operations
Sensing Operations
Erase Verification
Threshold Voltage
Memory Cell
Data Signals
Flash Memory
Configuration Data
Signal Line Delay
Runaway Programming
Memory Controllers
22 patents (USPTO):Explore Patents

Title: Innovations by Jonathan Pabustan in Memory Device Technologies

Introduction

Jonathan Pabustan is a distinguished inventor based in San Lorenzo, California, known for his contributions to memory device technologies. With an impressive portfolio of 22 patents, he has made significant advancements in methods for sensing and programming memory devices, leading to enhanced performance in this crucial field.

Latest Patents

Among Jonathan's latest innovations are patents focused on "Sensing operations in a memory device" and "Programming operations in a memory device." In his inventions, he describes methods for sensing, including the use of a counting circuit that generates both a count output and a translated count output. Notably, the count output is converted into a time-varying voltage, which biases a word line linked to the memory cells being sensed. Each memory cell has target data stored in an associated data cache. When a memory cell is activated, the translated count output is compared to the target data, allowing for a precise determination of the memory cell's state.

Career Highlights

Throughout his career, Jonathan has worked with leading companies in the technology sector, including Micron Technology Incorporated and Silicon Storage Technology, Inc. His experience in these organizations has refined his expertise in memory systems and their applications.

Collaborations

Jonathan has had the opportunity to collaborate with talented professionals in the field, including colleagues Vishal Sarin and Frankie F Roohparvar. Their collective expertise has contributed to the development of innovative technologies in the memory domain.

Conclusion

Jonathan Pabustan's relentless pursuit of innovation has established him as a significant figure in the technology sector, particularly in memory devices. His contributions continue to influence the industry, driving advancements that enhance the performance and efficiency of memory systems. With a robust foundation in invention and patents, his work stands as a testament to the importance of inventive spirit in technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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