The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2012

Filed:

Sep. 19, 2011
Applicants:

Jung-sheng Hoei, Newark, CA (US);

Jonathan Pabustan, San Lorenzo, CA (US);

Vishal Sarin, Cupertino, CA (US);

William H. Radke, Los Gatos, CA (US);

Frankie F. Roohparvar, Monte Sereno, CA (US);

Inventors:

Jung-Sheng Hoei, Newark, CA (US);

Jonathan Pabustan, San Lorenzo, CA (US);

Vishal Sarin, Cupertino, CA (US);

William H. Radke, Los Gatos, CA (US);

Frankie F. Roohparvar, Monte Sereno, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of operating memories facilitate compensating for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available. Methods include selecting a memory cell signal line of a memory and characterizing the memory cell signal line by determining an RC time constant of the memory cell signal line.


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