The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Nov. 18, 2010
Applicants:
Vishal Sarin, Cupertino, CA (US);
Jung-sheng Hoei, Newark, CA (US);
Jonathan Pabustan, San Lorenzo, CA (US);
Frankie F. Roohparvar, Monte Sereno, CA (US);
Inventors:
Vishal Sarin, Cupertino, CA (US);
Jung-Sheng Hoei, Newark, CA (US);
Jonathan Pabustan, San Lorenzo, CA (US);
Frankie F. Roohparvar, Monte Sereno, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory has a memory array with a memory cell. The memory is adapted to program a first number of bits into the memory cell. The memory is adapted to sense a second number of bits, different from the first number of bits, from the memory cell.
Sarin, Vishal. (2013). Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cell (U.S. Patent No. 8385121). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8385121
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile