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For the Inventor, By the Inventor

Mesa, AZ, United States of America

John Kouvetakis

This inventor holds 23 USPTO granted patents and 7 published patent applications and 2 EPO patents, primarily in Silicon-Germanium Materials. Top assignees: Arizona State University, United States of America as Represented by the Secretary of the Air Force. Active years: 1997-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John Kouvetakis. Retrieved from https://idiyas.com/inventor/john-kouvetakis

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 13.0

 

Average Co-Inventor Count = 2.8

ph-index = 9

Forward Citations = 1,700(Granted Patents)


Location History:

  • Tempe, AZ (US) (1997)
  • Mesa, AZ (US) (2001 - 2014)

Company Filing History:

goldMedal22 out of 2,164 
 
Arizona State University
 patents
silverMedal1 out of 5,091 
 
United States of America as Represented by the Secretary of the Air Force
 patents

Years Active: 1997-2014

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Areas of Expertise:
Silicon-Germanium Hydrides
Semiconductor Substrates
Epitaxial Growth
Group IV Quantum Wells
GeSn Alloys
Superhard Dielectric Compounds
Thin Films
Nitride Integration
23 patents (USPTO):Explore Patents
1. 8821635 - Method for growing Si-Ge semiconductor materials and devices on substrates (2014-09-02),
2. 8803194 - Zirconium and hafnium boride alloy templates on silicon for nitride integration applications (2014-08-12),
3. 8568681 - Hydride compounds with silicon and germanium core atoms and method of synthesizing same (2013-10-29),
4. 8545627 - Zirconium and hafnium boride alloy templates on silicon for nitride integration applications (2013-10-01),
5. 8524582 - Silicon-germanium hydrides and methods for making and using same (2013-09-03),
6. 8518360 - Silicon-germanium hydrides and methods for making and using same (2013-08-27),
7. 8216537 - Silicon-germanium hydrides and methods for making and using same (2012-07-10),
8. 8133802 - Silicon-germanium hydrides and methods for making and using same (2012-03-13),
9. 8043980 - Methods for making and using halosilylgermanes (2011-10-25),
10. 8029905 - GeSiSn-based compounds, templates, and semiconductor structures (2011-10-04),
11. 7981392 - Hydride compounds with silicon and germanium core atoms and method of synthesizing same (2011-07-19),
12. 7915104 - [object Object] (2011-03-29),
13. 7910468 - Methods and compositions for preparing Ge/Si semiconductor substrates (2011-03-22),
14. 7781356 - Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer (2010-08-24),
15. 7598513 - [object Object] (2009-10-06),

Title: The Innovative Journey of John Kouvetakis

Introduction:

John Kouvetakis, a distinguished inventor hailing from Mesa, AZ, has made significant contributions to the field of technology and innovation through his groundbreaking inventions and patents.

Latest Patents:

John Kouvetakis holds several patents in the areas of semiconductor materials and nanotechnology, with his most recent patent focusing on advanced solar cell technology that promises to revolutionize renewable energy solutions.

Career Highlights:

With a career spanning over three decades, John Kouvetakis has worked tirelessly to push the boundaries of scientific discovery. His work in developing novel materials for electronic devices has earned him recognition as a pioneer in the industry.

Collaborations:

Throughout his career, John Kouvetakis has collaborated with leading research institutions, universities, and technology companies to further his research and bring his inventions to life. His collaborative spirit has led to groundbreaking advancements in the field of materials science.

Conclusion:

In conclusion, John Kouvetakis stands as a testament to the power of innovation and perseverance in the world of technology. His relentless pursuit of excellence and passion for discovery continue to inspire generations of inventors and researchers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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