The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Jun. 14, 2004
Applicants:
John Kouvetakis, Mesa, AZ (US);
Matthew Bauer, Hillsboro, OR (US);
John Tolle, Gilbert, AZ (US);
Inventors:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnDwith SiHGeH. Using the method, single-phase SiSnGesemiconductors (x≦0.25, y≦0.11) are grown on Si via GeSnbuffer layers The GeSnbuffer layers facilitate heteroepitaxial growth of the SiSnGefilms and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiHGeHspecies was prepared using a new and high yield method that provided high purity semiconductor grade material.
Published as: