The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jun. 04, 2008
John Kouvetakis, Mesa, AZ (US);
Yan-yan Fang, Tempe, AZ (US);
John Kouvetakis, Mesa, AZ (US);
Yan-Yan Fang, Tempe, AZ (US);
Abstract
The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH)CHand GeH; (b) GeHCHand GeH; or (c) (GeH)CH, GeHCHand GeH, wherein in all cases, GeHis in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH)CHand/or GeHCHand GeHin a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 10/cmwhich can be useful in semiconductor devices.