Location History:
- Pujiang, CN (2011)
- Tempe, AZ (US) (2011)
Company Filing History:
Years Active: 2011
Title: Innovations of Yan-Yan Fang
Introduction
Yan-Yan Fang is a prominent inventor based in Tempe, AZ (US). She has made significant contributions to the field of semiconductor technology. With a total of 3 patents to her name, her work focuses on advanced materials and methods for semiconductor applications.
Latest Patents
Yan-Yan Fang's latest patents include innovative methods for making and using halosilylgermanes. This invention provides compounds of the molecular formula SiGeHX, where X is a halogen. The methods outlined in her patents facilitate the deposition of high-Ge content silicon films on silicon substrates. Another notable patent describes methods for preparing semiconductor structures, which involve forming a GeSn buffer layer on a semiconductor substrate. This process allows for the creation of a tensile strained Ge layer, which is essential for enhancing the performance of semiconductor devices, particularly in optical fiber communications.
Career Highlights
Yan-Yan Fang is affiliated with Arizona State University, where she conducts her research and development. Her work has garnered attention for its potential applications in the semiconductor industry. She is recognized for her innovative approaches to material science and engineering.
Collaborations
Yan-Yan Fang has collaborated with notable colleagues, including John Kouvetakis and Jesse Tice. These collaborations have further enriched her research and contributed to the advancement of semiconductor technologies.
Conclusion
Yan-Yan Fang's contributions to the field of semiconductor technology through her patents and research at Arizona State University highlight her role as an influential inventor. Her work continues to pave the way for advancements in the industry.