The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jun. 04, 2008
John Kouvetakis, Mesa, AZ (US);
Yan-yan Fang, Tempe, AZ (US);
John Kouvetakis, Mesa, AZ (US);
Yan-Yan Fang, Tempe, AZ (US);
Abstract
The present disclosure describes methods for preparing semiconductor structures, comprising forming a GeSnbuffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the GeSnbuffer layer using an admixture of (GeH)CHand GeHin a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH)CHand GeHin a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.