Arizona State University

Yan-Yan Fang

John Kouvetakis

Jesse Tice

The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SiGeHX; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.

Methods for making and using halosilylgermanes

The present disclosure describes methods for preparing semiconductor structures, comprising forming a GeSnbuffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the GeSnbuffer layer using an admixture of (GeH)CHand GeHin a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH)CHand GeHin a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.

[object Object]

The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH)CHand GeH; (b) GeHCHand GeH; or (c) (GeH)CH, GeHCHand GeH, wherein in all cases, GeHis in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH)CHand/or GeHCHand GeHin a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 10/cmwhich can be useful in semiconductor devices.

Growing community of inventors

Tempe, AZ, United States of America

Yan-Yan Fang