Arizona State University

Arizona Board of Regents, a Body Corporate

United States of America As Represented by the Secretary of the Air Force

John Kouvetakis

John Tolle

Ignatius S T Tsong

Radek Roucka

Cole J Ritter, Iii

Jose Menendez

Matthew Bauer

Yan-Yan Fang

Cole J Ritter

Changwu Hu

Andrew Chizmeshya

Richard A Soref

Dean Samara-Rubio

Ling Liao

Ignatius S Tsong

Jesse Tice

Chang Wu Hu

Levi Torrison

Candi Cook

Jeff McMurran

Michael Todd

Cole J Iii Ritter

Si&#x2014;Ge materials are grown on Si(100) with Ge-rich contents (Ge&#x3e;50 at. %) and precise stoichiometries SiGe, SiGe, SiGeand SiGe. New hydrides with direct Si&#x2014;Ge bonds derived from the family of compounds (HGe)SiH(x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450&#xb0; C. At about 500-700&#xb0; C., SiGequantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.

Method for growing Si-Ge semiconductor materials and devices on substrates

Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.

Zirconium and hafnium boride alloy templates on silicon for nitride integration applications

A method is provided for synthesizing silicon-germanium hydride compounds of the formula (HGe)SiH, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeHligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeHligand is selected from the group consisting of KGeH, NaGeHand MRGeH, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HSi(OSOCF)or HSi(OSOCF). The method can be used to synthesize trisilane, (HSi)SiH, and the iso-tetrasilane analog, (HSi)SiH, by combining a silane triflate with a compound comprising a SiHligand under conditions whereby the silicon hydride is formed. The silane triflate can include HSi(OSOCF)or HSi(OSOCF)wherein x=1 or 2. A method for synthesizing (HGe)SiHincludes combining HGeSiH(OSOCF) with KGeHunder conditions whereby (HGe)SiHis formed.

Hydride compounds with silicon and germanium core atoms and method of synthesizing same

The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

Silicon-germanium hydrides and methods for making and using same

The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.

The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SiGeHX; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.

Methods for making and using halosilylgermanes

The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01&#x3c;y&#x3c;0.11, and 0.26&#x3c;x&#x3c;0.35, and semiconductor structures comprising such compounds. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, and a Group III-V or II-VI active layer. The present invention also provides novel semiconductor structures comprising silicon substrates, an SiGe buffer layer, an SiGeSn template layer, and an SiGe, Ge, Group III-V, or Group II-VI active layer.

GeSiSn-based compounds, templates, and semiconductor structures

The present disclosure describes methods for preparing semiconductor structures, comprising forming a GeSnbuffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the GeSnbuffer layer using an admixture of (GeH)CHand GeHin a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH)CHand GeHin a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.

[object Object]

The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH)CHand GeH; (b) GeHCHand GeH; or (c) (GeH)CH, GeHCHand GeH, wherein in all cases, GeHis in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH)CHand/or GeHCHand GeHin a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 10/cmwhich can be useful in semiconductor devices.

Methods and compositions for preparing Ge/Si semiconductor substrates

A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film formed by epitaxy over the buffer layer. The buffer layer is reflective and conductive. The buffer layer may comprise B an element selected from the group consisting of Zr, Hf, Al. For example, the buffer layer may comprise ZrB, AlBor HfB. The buffer layer provides a lattice match with the group III nitride layer. The substrate can comprise silicon, silicon carbide (SiC), gallium arsenide (GaAs), sapphire or AlO. The group III nitride material includes GaN, AlN, InN, AlGaN, InGaN or AlInGaN and can form an active region. In a presently preferred embodiment, the buffer layer is ZrBand the substrate is Si(111) or Si(100) and the group III nitride layer comprises GaN. The ZrBbuffer layer provides a reflective and conductive buffer layer that has a small lattice mismatch with GaN. The semiconductor structure can be used to fabricate active microelectronic devices, such as transistors including field effect transistors and bipolar transistors. The semiconductor structure also can be used to fabricate optoelectronic devices, such as laser diodes and light emitting diodes.

Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

A novel method for synthesizing device-quality alloys and ordered phases in a Si&#x2014;Ge&#x2014;Sn system uses a UHV-CVD process and reactions of SnDwith SiHGeH. Using the method, single-phase SiSnGesemiconductors (x&#x2266;0.25, y&#x2266;0.11) are grown on Si via GeSnbuffer layers The GeSnbuffer layers facilitate heteroepitaxial growth of the SiSnGefilms and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si&#x2014;Ge&#x2014;Sn materials. The SiHGeHspecies was prepared using a new and high yield method that provided high purity semiconductor grade material.

Growing community of inventors

Mesa, AZ, United States of America

John Kouvetakis