John D Boniface

Title: Innovations of John D Boniface in Atomic Layer Etching

Introduction

John D Boniface is a prominent inventor based in Santa Clara, CA, known for his significant contributions to the field of atomic layer etching. With a total of 6 patents to his name, Boniface has made remarkable advancements that enhance the precision and efficiency of substrate processing.

Latest Patents

Among his latest patents, Boniface has developed methods for performing atomic layer etching (ALE) using a combination of plasma and vapor treatments. One notable patent outlines a method that includes several operations: performing a surface modification operation on a substrate surface to convert at least one monolayer into a modified layer, followed by a removal operation to eliminate the modified layer. This process involves exposing the substrate to a metal complex, facilitating a ligand exchange reaction. After the removal, a plasma treatment is applied to eliminate any residues formed during the process. These operations are repeated until the desired thickness is achieved on the substrate surface.

Career Highlights

Boniface is currently employed at Lam Research Corporation, where he continues to innovate and refine techniques in the semiconductor manufacturing industry. His work has been instrumental in advancing the capabilities of atomic layer etching, which is crucial for the production of modern electronic devices.

Collaborations

Throughout his career, Boniface has collaborated with notable colleagues, including Gregory Sexton and Andrew D Bailey, III. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

John D Boniface's contributions to atomic layer etching exemplify the impact of innovative thinking in technology. His patents and work at Lam Research Corporation continue to shape the future of semiconductor manufacturing.