The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Feb. 28, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Andreas Fischer, Castro Valley, CA (US);

Thorsten Lill, Santa Clara, CA (US);

Richard Janek, Oakland, CA (US);

John Boniface, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23F 1/00 (2006.01); C23F 1/12 (2006.01); C23F 4/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); C23C 16/0245 (2013.01); C23F 1/00 (2013.01); C23F 1/12 (2013.01); C23F 4/00 (2013.01); H01J 37/32009 (2013.01); H01J 37/32082 (2013.01); H01L 21/30655 (2013.01); H01L 21/32136 (2013.01); B81C 2201/0135 (2013.01); B81C 2201/0142 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.


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