Lam Research Corporation

John D Boniface

Andrew D Bailey, Iii

Alan M Schoepp

Gregory Sexton

Thorsten B Lill

Andreas Fischer

Richard Janek

Bart Jan Van Schravendijk

Richard Howard Gould

Ivan Berry

Alexander Dulkin

Theodoros Panagopoulos

Edmundo Reyes

A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

Atomic layer etching using a combination of plasma and vapor treatments

A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

[object Object]

An apparatus for transporting or storing at least one semiconductor wafer in an ultra-high vacuum is provided. A portable vacuum transfer pod is provided comprising an internal wafer storage chamber for storing one or more wafers and a wafer support for supporting at least one wafer within the internal wafer storage chamber. A passively capable vacuum pump capable of passive vacuum pumping is in fluid connection with the internal wafer storage chamber and is mechanically connected to the portable vacuum transfer pod. A shut off valve for opening and closing the fluid connection is between the passively capable vacuum pump and the internal wafer storage chamber.

Ultra-high vacuum transport and storage

Methods for orienting an upper electrode relative to a lower electrode are provided. The lower electrode is configured to have a desired existing orientation in a process chamber to define active and inactive process zones in the process chamber for processing a wafer. The method includes configuring each electrode with a reference surface, where a lower electrode reference surface is in the desired existing orientation and an upper electrode reference surface to be oriented parallel to the lower electrode reference surface. Then, temporarily holding the upper electrode reference surface oriented parallel to the lower electrode reference surface, and securing the upper electrode to a drive to mount the upper electrode reference surface parallel to the lower electrode reference surface. Other method configurations are also disclosed and illustrated.

Method of orienting an upper electrode relative to a lower electrode for bevel edge processing

Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

Apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer

Methods of and apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer

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Santa Clara, CA, United States of America

John D Boniface