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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Joffre F Bernard

This inventor holds 17 USPTO granted patents. Top assignees: Advanced Micro Devices Corporation, Spansion LLC., Other. Active years: 2001-2013.

USPTO Granted Patents = 17

% Patents Active = 70.6

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 119(Granted Patents)


Location History:

  • Redwood City, CA (US) (2002 - 2004)
  • Santa Clara, CA (US) (2001 - 2013)

Company Filing History:

goldMedal13 out of 13,161 
 
Advanced Micro Devices Corporation
 patents
silverMedal3 out of 1,075 
 
Spansion LLC.
 patents
bronzeMedal1 out of 834,453 
Other
 patents

Years Active: 2001-2013

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17 patents (USPTO):Explore Patents
1. 8373148 - Memory device with improved performance (2013-02-12),
2. 8093698 - Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device (2012-01-10),
3. 7790497 - Method to prevent alloy formation when forming layered metal oxides by metal oxidation (2010-09-07),
4. 6811671 - Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formed (2004-11-02),
5. 6770559 - Method of forming wiring by implantation of seed layer material (2004-08-03),
6. 6630741 - Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed (2003-10-07),
7. 6624074 - Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution (2003-09-23),
8. 6621165 - Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface (2003-09-16),
9. 6541860 - Barrier-to-seed layer alloying in integrated circuit interconnects (2003-04-01),
10. 6541286 - Imaging of integrated circuit interconnects (2003-04-01),
11. 6515367 - Sub-cap and method of manufacture therefor in integrated circuit capping layers (2003-02-04),
12. 6479898 - Dielectric treatment in integrated circuit interconnects (2002-11-12),
13. 6469387 - Semiconductor device formed by calcium doping a copper surface using a chemical solution (2002-10-22),
14. 6465867 - Amorphous and gradated barrier layer for integrated circuit interconnects (2002-10-15),
15. 6444580 - Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed (2002-09-03),

Title: The Inventor Joffre F Bernard: Pioneering Innovations in Santa Clara

Introduction: Joffre F Bernard is a distinguished inventor based in Santa Clara, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Joffre F Bernard holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Joffre F Bernard has worked with leading tech companies in Silicon Valley, spearheading research and development projects that have led to significant technological advancements.

Collaborations: Throughout his career, Joffre F Bernard has collaborated with top engineers, scientists, and researchers from renowned universities and research institutions, fostering a culture of innovation and excellence in all his projects.

Conclusion: Joffre F Bernard's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a visionary inventor in Santa Clara and beyond.

Profile summary based on public USPTO records.
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