The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Feb. 22, 2002
Sergey Lopatin, Santa Clara, CA (US);
Alexander H. Nickel, Mountain View, CA (US);
Joffre F. Bernard, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of fabricating a semiconductor device, having a reduced-oxygen Cu—Zn alloy thin film ( ) electroplated on a Cu surface ( ) by electroplating, using an electroplating apparatus, the Cu surface ( ) in a unique chemical solution containing salts of zinc (Zn) and copper (Cu), their complexing agents, a pH adjuster, and surfactants; and annealing the electroplated Cu—Zn alloy thin film ( ); and a semiconductor device thereby formed. The method controls the parameters of pH, temperature, and time in order to form a uniform reduced-oxygen Cu—Zn alloy thin film ( ), having a controlled Zn content, for reducing electromigration on the Cu—Zn/Cu structure by decreasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate, for improving device reliability, and for increasing corrosion resistance.