Jing Gao

Title: Innovations of Jing Gao in Three-Dimensional Memory Technology

Introduction

Jing Gao is a prominent inventor based in Hubei, China, known for his significant contributions to the field of memory technology. With a total of 10 patents to his name, he has made remarkable advancements in three-dimensional NAND memory devices.

Latest Patents

One of Jing Gao's latest patents is a three-dimensional memory device and fabrication method. This innovation involves a fabrication method that includes forming a conductor/insulator stack over a substrate, creating a dielectric layer of a dielectric material that includes atomic hydrogen over part of the conductor/insulator stack, and performing a thermal process to release the atomic hydrogen from the dielectric material. This process allows the atomic hydrogen to diffuse into the conductor/insulator stack. Another notable patent is also focused on three-dimensional NAND memory devices, detailing a fabrication method that includes forming a semiconductor layer over a substrate, creating an opening that extends partially through the semiconductor layer, and depositing a first and second stack layer that are alternately stacked over the sidewall of the opening and over the semiconductor layer. This method culminates in filling the opening with a dielectric material to form an alignment mark.

Career Highlights

Jing Gao has worked with leading companies in the technology sector, including Yangtze Memory Technologies Co., Ltd. and Wuhan United Imaging Healthcare Co., Ltd. His work in these organizations has been pivotal in advancing memory technology.

Collaborations

Jing has collaborated with notable colleagues, including Bo Xu and Ping Yan, who have contributed to his innovative projects and research.

Conclusion

Jing Gao's contributions to three-dimensional memory technology exemplify his expertise and innovative spirit. His patents reflect a commitment to advancing the field and improving memory device fabrication methods.