Hsinchu, Taiwan

Jian-Zhi Huang

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Taiwan University, National Yang Ming Chiao Tung University. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jian-Zhi Huang. Retrieved from https://idiyas.com/inventor/jian-zhi-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

% Patents Active = 85.7

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Hsinchu, TW (2009 - 2016)
  • Changhua County, TW (2022 - 2024)

Company Filing History:


Years Active: 2009-2026

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7 patents (USPTO):Explore Patents

Title: The Innovations of Jian-Zhi Huang

Introduction

Jian-Zhi Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on advanced semiconductor devices and methods that enhance performance and efficiency.

Latest Patents

One of Jian-Zhi Huang's latest patents is a semiconductor device and method for forming the same. This invention includes a semiconductor structure that comprises a semiconductor substrate, a gate structure, a source/drain structure, a contact, a dielectric layer, and a metal line. The gate structure is positioned on the semiconductor substrate, while the source/drain structure is adjacent to it. The contact lands on the source/drain structure, and the dielectric layer spans the contact and the gate structure. The metal line extends through the dielectric layer to the contact, featuring a liner over the contact, a magnetic layer over the liner, a graphene layer over the magnetic layer, and a filling metal over the graphene layer. Notably, the magnetic layer has a greater permeability coefficient than the filling metal.

Another significant patent involves a plasma enhanced chemical vapor deposition (PECVD) method. This method includes loading a wafer with a magnetic layer into a processing chamber equipped with a radio frequency (RF) system. An aromatic hydrocarbon precursor is introduced into the chamber, and the RF source is activated to decompose the precursor into active radicals at a frequency greater than about 1000 Hz, forming a graphene layer over the magnetic layer.

Career Highlights

Jian-Zhi Huang has worked with notable organizations, including Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Some of his coworkers include I-Chih Ni and Chih-I Wu, who have collaborated with him on various projects and patents.

Conclusion

Jian-Zhi Huang's contributions to semiconductor technology through his patents and career achievements highlight his role as an influential inventor in the field. His innovative methods and devices continue to shape the future of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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