The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2022

Filed:

Jan. 10, 2020
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Jian-Zhi Huang, Changhua County, TW;

Yun-Hsuan Hsu, Hsinchu County, TW;

I-Chih Ni, New Taipei, TW;

Chih-I Wu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01J 37/32 (2006.01); C23C 16/505 (2006.01); C23C 16/26 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); C23C 16/26 (2013.01); C23C 16/505 (2013.01); H01J 37/321 (2013.01); H01J 37/32449 (2013.01); H01L 21/28525 (2013.01); H01L 21/7684 (2013.01); H01L 21/76807 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76868 (2013.01); H01L 21/76876 (2013.01); H01L 23/5226 (2013.01); H01L 23/53276 (2013.01); H01J 2237/3321 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 27/0928 (2013.01);
Abstract

A method includes loading a wafer into a processing chamber, wherein the processing chamber is wound by a coil, and the coil is coupled to an RF system; supplying an aromatic hydrocarbon precursor into the processing chamber; after supplying the aromatic hydrocarbon precursor, turning on an RF power of the RF system to decompose the aromatic hydrocarbon precursor into active radicals and cyclize the active radicals into a graphene layer over a metal layer on the wafer; and after an entirety of the metal layer being covered by the graphene layer, turning off the RF power of the RF system to stop forming the graphene layer.


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