The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Jan. 25, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Ya-Ting Chang, Yunlin County, TW;
Jian-Zhi Huang, Changhua County, TW;
Jin-Bin Yang, Taichung, TW;
I-Chih Ni, New Taipei, TW;
Chih-I Wu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method for forming an integrated circuit device is provided. The method includes forming a transistor over a frontside of a substrate; forming an interconnect structure over the transistor; depositing a first transition metal layer over the interconnect structure; performing a plasma treatment to turn the first transition metal layer into a first transition metal dichalcogenide layer; forming a dielectric layer over the first transition metal dichalcogenide layer; forming a first gate electrode over the dielectric layer and a first portion of the first transition metal dichalcogenide layer; and forming a first source contact and a first drain contact respectively connected with a second portion and a third portion of the first transition metal dichalcogenide layer, the first portion of the first transition metal dichalcogenide layer being between the second and third portions of the first transition metal dichalcogenide layers.