Jin-Bin Yang

Title: Jin-Bin Yang: Innovator in Integrated Circuit Technology

Introduction

Jin-Bin Yang is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of integrated circuit technology, particularly through his innovative patent.

Latest Patents

Jin-Bin Yang holds a patent for an "Integrated circuit device and method for forming the same." This patent describes a method for forming an integrated circuit device that includes several key steps. The process involves forming a transistor over a substrate, creating an interconnect structure, and depositing a transition metal layer. A plasma treatment is then performed to convert this layer into a transition metal dichalcogenide layer. The method further includes forming a dielectric layer and a gate electrode, along with source and drain contacts connected to specific portions of the transition metal dichalcogenide layer.

Career Highlights

Throughout his career, Jin-Bin Yang has worked with prominent organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Jin-Bin Yang has collaborated with talented individuals in his field, including Ya-Ting Chang and Jian-Zhi Huang. These collaborations have contributed to the advancement of integrated circuit technologies.

Conclusion

Jin-Bin Yang's work in integrated circuit technology exemplifies innovation and dedication. His patent and career achievements highlight his significant role in advancing semiconductor technology.