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For the Inventor, By the Inventor

Cupertino, CA, United States of America

Ji-Hyoung Yoo

USPTO Granted Patents = 23 

Average Co-Inventor Count = 2.3

ph-index = 6

Forward Citations = 71(Granted Patents)


Location History:

  • Cupertino, CA (US) (2005 - 2018)
  • Los Gatos, CA (US) (2016 - 2021)

Company Filing History:

goldMedal17 out of 364 
 
Monolithic Power Systems, Inc.
 patents
silverMedal3 out of 388 
 
Micrel, Incorporated
 patents
bronzeMedal2 out of 326 
 
Chengdu Monolithic Power Systems Co., Ltd.
 patents
4. 1 out of 832,680 
Other
 patents

Years Active: 2005-2021

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23 patents (USPTO):Explore Patents
1. 11205722 - Lateral DMOS having reduced lateral size (2021-12-21),
2. 11069777 - Manufacturing method of self-aligned DMOS body pickup (2021-07-20),
3. 11049957 - LDMOS device with sinker link (2021-06-29),
4. 10090409 - Method for fabricating LDMOS with self-aligned body (2018-10-02),
5. 10090200 - Bipolar junction semiconductor device and method for manufacturing thereof (2018-10-02),
6. 9941171 - Method for fabricating LDMOS with reduced source region (2018-04-10),
7. 9935176 - Method for fabricating LDMOS using CMP technology (2018-04-03),
8. 9893170 - Manufacturing method of selectively etched DMOS body pickup (2018-02-13),
9. 9893146 - Lateral DMOS and the method for forming thereof (2018-02-13),
10. 9583561 - Schottky diodes with mesh style region and associated methods (2017-02-28),
11. 9502251 - Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process (2016-11-22),
12. 9219146 - High voltage PMOS and the method for forming thereof (2015-12-22),
13. 9159795 - High side DMOS and the method for forming thereof (2015-10-13),
14. 9087774 - LDMOS device with short channel and associated fabrication method (2015-07-21),
15. 8916913 - High voltage semiconductor device and the associated method of manufacturing (2014-12-23),

Title: The Inventive Mind of Ji-Hyoung Yoo: A Pioneer in Semiconductor Technologies

Introduction:

Ji-Hyoung Yoo, a prolific inventor based in Cupertino, CA, has left an indelible mark in the field of semiconductor technologies. With a substantial portfolio of 23 patents to his name, his innovative contributions continue to shape the industry.

Latest Patents:

Among his most recent patents is the design for a "Lateral DMOS having reduced lateral size." This lateral DMOS features a unique structure with two gate regions, enhancing performance and efficiency. Another notable innovation is his "Manufacturing method of self-aligned DMOS body pickup," a groundbreaking process for creating DMOS devices in semiconductor substrates.

Career Highlights:

Having worked at esteemed companies such as Monolithic Power Systems, Inc. and Micrel, Incorporated, Ji-Hyoung Yoo has honed his expertise in semiconductor technologies. His career is dotted with significant advancements that have pushed the boundaries of innovation in the industry.

Collaborations:

Throughout his journey, Ji-Hyoung Yoo has collaborated with talented professionals like Joel McGregor and Jeesung Jung. These partnerships have been instrumental in bringing cutting-edge ideas to fruition and further establishing his reputation as a visionary inventor.

Conclusion:

In conclusion, Ji-Hyoung Yoo stands as a beacon of innovation in the realm of semiconductor technologies. His inventive spirit, coupled with a relentless pursuit of excellence, continues to drive the industry forward. With an impressive patent portfolio and a legacy of collaboration, he exemplifies the essence of pioneering inventors in the modern era.

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