The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Jun. 09, 2020
Monolithic Power Systems, Inc., San Jose, CA (US);
Ji-Hyoung Yoo, Los Gatos, CA (US);
Joel McGregor, Issaquah, WA (US);
Haifeng Yang, Chengdu, CN;
Deming Xiao, Los Altos Hills, CA (US);
Monolithic Power Systems, Inc., San Jose, CA (US);
Abstract
A manufacturing process of a DMOS device in a drift region in a semiconductor substrate, having: forming a polysilicon layer above the drift region; forming a block layer above the polysilicon layer; etching both the block layer and the polysilicon layer, through a window of a first masking layer to expose a window to the drift region; implanting dopants through the window to the drift region to form a body region; forming blocking spacers to wrap side walls of the polysilicon layer; implanting dopants into the body region under a window shaped by the blocking spacers to form a body pickup region; etching away the blocking spacers; performing a masking step to form gates; forming ONO spacers to wrap side walls of the gates; and performing a masking step to form source regions and drain pickup regions.