The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Apr. 16, 2020
Applicant:
Monolithic Power Systems, Inc., San Jose, CA (US);
Inventors:
Ji-Hyoung Yoo, Los Gatos, CA (US);
Yanjie Lian, Chengdu, CN;
Daping Fu, Chengdu, CN;
Jin Xing, Chengdu, CN;
Assignee:
Monolithic Power Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66704 (2013.01); H01L 21/02293 (2013.01); H01L 21/02403 (2013.01); H01L 21/31144 (2013.01); H01L 29/063 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01);
Abstract
An LDMOS device with sinker link. The LDMOS device has a buried layer, a first well region and a sinker linking the buried layer and the first well region. The LDMOS device has a trench with its upper portion surrounded by the first well region and its lower portion surrounded by the sinker. The trench is formed so that the sinker can be formed by ion implantation through the trench. The trench is filled with non-conductive material.