The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Sep. 29, 2015
Monolithic Power Systems, Inc., San Jose, CA (US);
Joel M. McGregor, Issaquah, WA (US);
Jeesung Jung, San Jose, CA (US);
Ji-Hyoung Yoo, Los Gatos, CA (US);
Eric K. Braun, Mountain View, CA (US);
MONOLITHIC POWER SYSTEMS, INC., San Jose, CA (US);
Abstract
A method for fabricating a LDMOS device in a semiconductor substrate of a first doping type, including: implanting a series of dopants into the semiconductor substrate using a first mask, and forming a first region of a second doping type adjacent to the surface of the semiconductor substrate, a second region of the first doping type located beneath the first region, and a third region of the second doping type located beneath the second region; implanting dopants into the semiconductor substrate using a second mask, and forming a fourth region of the second doping type adjacent to the first, second and third regions, wherein the fourth region extends from the surface of the semiconductor substrate to approximately the same depth as the third region; and implanting dopants into the first region using a third mask, and form a first well of the first doping type.