Seoul, South Korea

Ji Houn Jung

This inventor holds 6 USPTO granted patents and 6 published patent applications. Top assignees: Db Hitek Co., Ltd., Db Hitek Co., Ltd.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji Houn Jung. Retrieved from https://idiyas.com/inventor/ji-houn-jung-di3x7mdr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 6 

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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6 patents (USPTO):Explore Patents

Title: The Innovations of Ji Houn Jung

Introduction

Ji Houn Jung is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of power semiconductor devices. His innovative approach aims to enhance the reliability and efficiency of these devices.

Latest Patents

Ji Houn Jung holds a patent for a power semiconductor device and its manufacturing method. This invention focuses on capturing electrons trapped on one side of a transistor during operation. It seeks to prevent current collapse effects and improve reliability by incorporating one or more hole injection regions in the separation space between the gate electrode and the drain electrode. He has 1 patent to his name.

Career Highlights

Ji Houn Jung is associated with Db Hitek Co., Ltd., where he continues to develop cutting-edge technologies in semiconductor manufacturing. His work has been instrumental in advancing the capabilities of power semiconductor devices.

Collaborations

Some of his notable coworkers include Dae Il Kim and Han Seok Ko. Their collaborative efforts contribute to the innovative environment at Db Hitek Co., Ltd.

Conclusion

Ji Houn Jung's contributions to the field of power semiconductor devices highlight his role as a key innovator in the industry. His patent reflects a commitment to improving technology and reliability in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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