The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Apr. 21, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Ji Houn Jung, Seoul, KR;
Dae Il Kim, Cheongju-si, KR;
Han Seok Ko, Seoul, KR;
Ung Bi Son, Bucheon-si, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 62/106 (2025.01); H10D 62/343 (2025.01);
Abstract
A power semiconductor device and its manufacturing method are proposed. Specifically, the device features a plurality of guard rings formed on the separation space between the gate electrode and drain electrode. These guard rings inject holes into the channel layer, which capture trapped electrons and prevent the occurrence of a current collapse effect. By reducing the concentration of the electric field at the edge of the drain electrode, this power semiconductor device ensures the reliability of the device.