Bucheon-si, South Korea

Ung Bi Son

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Ung Bi Son: Innovator in Power Semiconductor Technology

Introduction

Ung Bi Son is a notable inventor based in Bucheon-si, South Korea. He has made significant contributions to the field of power semiconductor devices. His innovative work focuses on enhancing the reliability and efficiency of these devices.

Latest Patents

Ung Bi Son holds a patent for a power semiconductor device and its manufacturing method. This invention aims to capture electrons that are trapped on one side of a transistor during its operation. By preventing current collapse effects and improving reliability, his design includes one or more hole injection regions in the separation space between the gate electrode and the drain electrode. This advancement is crucial for the development of more efficient semiconductor technologies.

Career Highlights

Ung Bi Son is associated with Db Hitek Co., Ltd., where he continues to work on cutting-edge semiconductor technologies. His expertise in this area has positioned him as a key player in the industry. His contributions are vital for the ongoing evolution of power semiconductor devices.

Collaborations

Some of his coworkers include Ji Houn Jung and Dae Il Kim. Their collaborative efforts contribute to the innovative environment at Db Hitek Co., Ltd.

Conclusion

Ung Bi Son's work in power semiconductor technology exemplifies the importance of innovation in enhancing device reliability and efficiency. His contributions are paving the way for future advancements in the semiconductor industry.

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