Db Hitek Co., Ltd.

Ung Bi Son

Han Seok Ko

Ji Houn Jung

Dae Il Kim

A power semiconductor device and a method of manufacturing the power semiconductor device are disclosed. The power semiconductor device includes an isolation region at or in a bather layer in contact with or adjacent to a drain electrode to reduce or prevent current collapse between a gate electrode and the drain electrode.

Power semiconductor device and manufacturing method thereof

Disclosed is a power semiconductor device and a manufacturing method thereof and, more particularly, a power semiconductor device and a manufacturing method thereof seeking to capture electrons trapped on one side of a transistor during transistor operation, prevent current collapse effects, and improve reliability consequently by forming or including one or more hole injection regions in a separation space between a gate electrode and a drain electrode.

Growing community of inventors

Bucheon-si, South Korea

Ung Bi Son