The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Apr. 03, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Ji Houn Jung, Seoul, KR;
Dae Il Kim, Cheongju-si, KR;
Han Seok Ko, Seoul, KR;
Ung Bi Son, Bucheon-si, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01);
Abstract
Disclosed is a power semiconductor device and a manufacturing method thereof and, more particularly, a power semiconductor device and a manufacturing method thereof seeking to capture electrons trapped on one side of a transistor during transistor operation, prevent current collapse effects, and improve reliability consequently by forming or including one or more hole injection regions in a separation space between a gate electrode and a drain electrode.