The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Apr. 15, 2024
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Min Su Cho, Eumseong-gun, KR;
Dae Il Kim, Eumseong-gun, KR;
Ji Houn Jung, Eumseong-gun, KR;
Hee Sub Lee, Eumseong-gun, KR;
Ung Bi Son, Eumseong-gun, KR;
Jun Hyeok Lee, Eumseong-gun, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 64/256 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/01 (2025.01); H10D 64/112 (2025.01);
Abstract
Proposed are a power semiconductor device and a method of manufacturing the same seeking to increase a current path area and to capture electrons trapped between a gate electrode and a drain electrode to prevent current collapse effects by forming a plurality of hole injection regions spaced apart from each other at the bottom of the drain electrode.