The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
May. 04, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Ji Houn Jung, Seoul, KR;
Dae Il Kim, Cheongju-si, KR;
Han Seok Ko, Seoul, KR;
Ung Bi Son, Bucheon-si, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/17 (2025.01); H10P 50/24 (2026.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/235 (2025.01); H10P 50/242 (2026.01);
Abstract
Proposed is a power semiconductor device in which an upper surface of a barrier layer between a gate electrode and a drain electrode has a stepped recess portion, thereby being capable of effectively controlling electric field strength at an interface positioned adjacent to the drain electrode and effectively restraining a carrier trap between the gate electrode and the drain electrode.