The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

May. 17, 2023
Applicant:

Db Hitek Co., Ltd., Bucheon-si, KR;

Inventors:

Han Seok Ko, Seoul, KR;

Dae Il Kim, Cheongju-si, KR;

Ji Houn Jung, Seoul, KR;

Ung Bi Son, Bucheon-si, KR;

Assignee:

DB HiTek Co., Ltd., Bucheon-si, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/20 (2026.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10W 10/00 (2026.01);
U.S. Cl.
CPC ...
H10W 10/20 (2026.01); H10D 30/0281 (2025.01); H10D 30/65 (2025.01); H10W 10/021 (2026.01);
Abstract

Proposed are a semiconductor device and a method of manufacturing the same, in which a first device isolation region includes a Pre-DTI region and a DTI region, wherein the DTI region is configured to be physically distinguishable by having an extension part with a substantially flat outer surface and a connection part with an outer surface including a concave and convex embossed portion so that an air gap in the first device isolation region is prevented from being formed in an asymmetric shape and is prevented from being externally exposed in a subsequent process.


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