IDiyas

For the Inventor, By the Inventor

Ithaca, NY, United States of America

Jeonghyun Hwang

USPTO Granted Patents = 21 

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 26(Granted Patents)


Company Filing History:

goldMedal15 out of 927 
 
Globalfoundries U.S. Inc.
 patents
silverMedal6 out of 1,521 
 
Cornell Research Foundation Inc.
 patents

Years Active: 2005-2025

where 'Filed Patents' based on already Granted Patents

21 patents (USPTO):
1. 12419098 - Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientation (2025-09-16),
2. 12119383 - Transistor with multi-level self-aligned gate and source/drain terminals and methods (2024-10-15),
3. 12087764 - Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientation (2024-09-10),
4. 12062574 - Integrated circuit structure with through-metal through-substrate interconnect and method (2024-08-13),
5. 12002878 - Implanted isolation for device integration on a common substrate (2024-06-04),
6. 11916119 - Transistor with self-aligned gate and self-aligned source/drain terminal(s) and methods (2024-02-27),
7. 11881506 - Gate structures with air gap isolation features (2024-01-23),
8. 11710655 - Integrated circuit structure with semiconductor-based isolation structure and methods to form same (2023-07-25),
9. 11646351 - Transistor with multi-level self-aligned gate and source/drain terminals and methods (2023-05-09),
10. 11616127 - Symmetric arrangement of field plates in semiconductor devices (2023-03-28),
11. 11569374 - Implanted isolation for device integration on a common substrate (2023-01-31),
12. 11469225 - Device integration schemes leveraging a bulk semiconductor substrate having a &#x3c;111 &#x3e; crystal orientation (2022-10-11),
13. 11316019 - Symmetric arrangement of field plates in semiconductor devices (2022-04-26),
14. 11177345 - Heterojunction bipolar transistor (2021-11-16),
15. 11177158 - Integrated circuit structure with semiconductor-based isolation structure and methods to form same (2021-11-16),

Title: Innovations by Jeonghyun Hwang: Pioneering Transistor Technologies

Introduction

Jeonghyun Hwang, based in Ithaca, NY, is an accomplished inventor with a remarkable portfolio of 20 patents. His contributions to the field of semiconductor technology, particularly in transistor development, showcase his innovative mindset and technical expertise.

Latest Patents

Among his latest patents, Hwang has developed a transistor featuring multi-level self-aligned gate and source/drain terminals. This innovative approach includes a method for concurrently forming gate and source/drain openings in a dielectric layer, enhancing the fabrication process. The method details depositing and patterning gate conductor material to create a structured framework for source/drain openings.

Additionally, Hwang has devised structures for device integration leveraging a bulk semiconductor substrate with a diamond crystal lattice structure and a <111> crystal orientation. These structures involve forming multiple transistors within designated regions of the substrate, incorporating layout stacks comprised of III-V compound semiconductor materials. This cutting-edge work is set to advance the efficiency and performance of semiconductor devices.

Career Highlights

Jeonghyun Hwang has had a distinguished career, with significant roles at leading organizations such as GlobalFoundries U.S. Inc. and Cornell Research Foundation Inc. His work within these companies has largely focused on pushing the boundaries of semiconductor technology and device fabrication techniques.

Collaborations

Throughout his career, Hwang has collaborated with notable colleagues such as Johnatan A. Kantarovsky and Siva P. Adusumilli. These partnerships reflect a commitment to advancing technology through collaborative effort, resulting in innovative solutions and patents that contribute to the field.

Conclusion

In summary, Jeonghyun Hwang's inventive contributions, particularly in transistor technology, serve as a testament to his expertise and dedication. His patents not only enhance the current understanding of semiconductor devices but also pave the way for future innovations in the industry.

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