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For the Inventor, By the Inventor

Ithaca, NY, United States of America

Jeonghyun Hwang

This inventor holds 22 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries U.S. Inc., Cornell University. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeonghyun Hwang. Retrieved from https://idiyas.com/inventor/jeonghyun-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 77.3

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 26(Granted Patents)


Company Filing History:

goldMedal16 out of 1,093 
 
Globalfoundries U.S. Inc.
 patents
silverMedal6 out of 2,954 
 
Cornell University
 patents

Years Active: 2005-2026

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Areas of Expertise:
Transistor Design
Semiconductor Substrate
Isolation Structures
Device Integration
Field Plates
Heterojunction Transistor
III-Nitride Semiconductors
Air Gap Isolation
Buried Porous Layer
Through-Metal Interconnect
Self-Aligned Gate
Doping Techniques
22 patents (USPTO):Explore Patents
1. 12604493 - Device over patterned buried porous layer of semiconductor material (2026-04-14),
2. 12419098 - Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientation (2025-09-16),
3. 12119383 - Transistor with multi-level self-aligned gate and source/drain terminals and methods (2024-10-15),
4. 12087764 - Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientation (2024-09-10),
5. 12062574 - Integrated circuit structure with through-metal through-substrate interconnect and method (2024-08-13),
6. 12002878 - Implanted isolation for device integration on a common substrate (2024-06-04),
7. 11916119 - Transistor with self-aligned gate and self-aligned source/drain terminal(s) and methods (2024-02-27),
8. 11881506 - Gate structures with air gap isolation features (2024-01-23),
9. 11710655 - Integrated circuit structure with semiconductor-based isolation structure and methods to form same (2023-07-25),
10. 11646351 - Transistor with multi-level self-aligned gate and source/drain terminals and methods (2023-05-09),
11. 11616127 - Symmetric arrangement of field plates in semiconductor devices (2023-03-28),
12. 11569374 - Implanted isolation for device integration on a common substrate (2023-01-31),
13. 11469225 - Device integration schemes leveraging a bulk semiconductor substrate having a &#x3c;111 &#x3e; crystal orientation (2022-10-11),
14. 11316019 - Symmetric arrangement of field plates in semiconductor devices (2022-04-26),
15. 11177345 - Heterojunction bipolar transistor (2021-11-16),

Title: Innovations by Jeonghyun Hwang: Pioneering Transistor Technologies

Introduction

Jeonghyun Hwang, based in Ithaca, NY, is an accomplished inventor with a remarkable portfolio of 20 patents. His contributions to the field of semiconductor technology, particularly in transistor development, showcase his innovative mindset and technical expertise.

Latest Patents

Among his latest patents, Hwang has developed a transistor featuring multi-level self-aligned gate and source/drain terminals. This innovative approach includes a method for concurrently forming gate and source/drain openings in a dielectric layer, enhancing the fabrication process. The method details depositing and patterning gate conductor material to create a structured framework for source/drain openings.

Additionally, Hwang has devised structures for device integration leveraging a bulk semiconductor substrate with a diamond crystal lattice structure and a <111> crystal orientation. These structures involve forming multiple transistors within designated regions of the substrate, incorporating layout stacks comprised of III-V compound semiconductor materials. This cutting-edge work is set to advance the efficiency and performance of semiconductor devices.

Career Highlights

Jeonghyun Hwang has had a distinguished career, with significant roles at leading organizations such as GlobalFoundries U.S. Inc. and Cornell Research Foundation Inc. His work within these companies has largely focused on pushing the boundaries of semiconductor technology and device fabrication techniques.

Collaborations

Throughout his career, Hwang has collaborated with notable colleagues such as Johnatan A. Kantarovsky and Siva P. Adusumilli. These partnerships reflect a commitment to advancing technology through collaborative effort, resulting in innovative solutions and patents that contribute to the field.

Conclusion

In summary, Jeonghyun Hwang's inventive contributions, particularly in transistor technology, serve as a testament to his expertise and dedication. His patents not only enhance the current understanding of semiconductor devices but also pave the way for future innovations in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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