Taipei, Taiwan

Jenn Tsao


Average Co-Inventor Count = 3.3

ph-index = 6

Forward Citations = 139(Granted Patents)


Company Filing History:


Years Active: 1998-2002

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11 patents (USPTO):Explore Patents

Title: Jenn Tsao: Innovator in Semiconductor Technology

Introduction

Jenn Tsao is a prominent inventor based in Taipei, Taiwan, known for her significant contributions to semiconductor technology. With a total of 11 patents to her name, she has made remarkable advancements in the field, particularly in memory array fabrication.

Latest Patents

Among her latest patents is a method of fabricating buried sources to shrink chip size in memory arrays. This innovative method involves forming buried source lines in semiconductor devices, enhancing the efficiency of memory cells. The invention allows for both the source region and the source line to be buried within the substrate, resulting in smaller chip sizes and faster access times. Another notable patent is her method of trench polishing, which optimizes the fabrication process by utilizing a photo-mask with a carefully designed pattern. This method improves the quality of the semiconductor substrate and enhances the overall performance of the devices.

Career Highlights

Throughout her career, Jenn Tsao has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and United Microelectronics Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking technologies.

Collaborations

Jenn has collaborated with notable professionals in her field, including Chia-Ta Hsieh and Di-Son Kuo. These partnerships have fostered innovation and have been instrumental in the development of her patented technologies.

Conclusion

Jenn Tsao's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in the industry. Her work continues to influence advancements in memory array fabrication and semiconductor device efficiency.

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