The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Jun. 09, 1998
United Microelectronics Corp., Taipei, TW;
Abstract
A method of manufacturing a complementary metal-oxide-semiconductor that utilizes a slight change in the patterned photoresist layer for forming the lightly doped drain structure of an NMOS and the halo implantation region during CMOS fabrication. By forming a photoresist layer that exposes the p-well region where a well pickup structure is to be formed, the distance between the photoresist layer and the gate is increased, thereby eliminating the restrictions imposed upon the tilt angle in a halo implantation. Later, the lightly doped n-type impurities in the well pickup region can be compensated for by the p-type impurity implantation when the PMOS source/drain regions are formed. Hence, the lightly doped n-type well pickup region can be reverted to a p-type impurity doped region.