The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Apr. 11, 1997
Applicant:
Inventors:
Chen Cheng Chou, Taichung, TW;
Jenn Tsao, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438241 ; 438595 ;
Abstract
A semiconductor fabrication process, allowing integration of MOSFET devices, and capacitor structures, on a single semiconductor chip, has been developed. The process integration features the use of a MOSFET device, fabricated using a self-aligned contact structure, allowing a reduction in the source and drain area needed for contact. Silicon nitride spacers, used on the sides of the polysilicon gate electrode, protect the polysilicon gate structure, during the opening of a self-aligned contact hole.